ALD allows depositing thin films with atomic layer control in a simple and reproducible process, with low impurity contamination, for a variety of applications, with possibility of deposition on very high aspect/ratio structures that need to be coated conformally. ALD can meet the needs for atomic layer control and conformal deposition using sequential, self-limiting surface reactions. The advantages of ALD are precise thickness control at the Ångstrom or monolayer level.
Dimensions 720 x 1340 x 1280 mm - Chamber volume 200 x 95 mm (diameter x height) - Temperature Range 25-500 °C
