The nanoCVD is a graphene chemical vapor deposition (CVD) system designed for meticulous control over essential parameters like pressure, temperature, and gas composition, which are crucial for effective graphene synthesis.
H2 and Ar as operation gases, CH4 as carbon feedstock, N2 as service gas - 1100 °C heater - 2cm x 3cm uniform heating surface - low thermal inertia, meaning fast processes (growth process lasting less than 30 minutes) - working both in gas flux control and in pressure control - low pressure operation: base pressure lower than 0.01 Torr, operating pressure 1-10 Torr (Ar/H2/CH4 mixture) - deposition controlled by a multi-setpoint programmable software - the equipment can be used also for carbon nanotube deposition
